2N4909 Просмотр технического описания (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

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Компоненты Описание

производитель

2N4909

Silicon PNP Power Transistors

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Power Transistors

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A

VBE(sat) Base-Emitter Saturation Voltage

IC= -4A; IB= -0.4A

VBE(on) Base-Emitter On Voltage

IC= -4A; VCE= -4V

ICEO

Collector Cutoff Current

VCE= -80V; IB= 0

ICBO

Collector Cutoff Current

ICEX

Collector Cutoff Current

IEBO

Emitter Cutoff Current

VCB= -80V; IE= 0

VCE= -80V; VBE(off)= -1.5V

VCE= -80V; VBE(off)= -1.5V, TC=150℃

VEB= -5V; IC= 0

hFE-1

DC Current Gain

IC= -4A; VCE= -4V

hFE-2

DC Current Gain

IC= -10A; VCE= -4V

fT

Current-Gain—Bandwidth Product IC= -1A; VCE= -10V; ftest= 1.0MHz

2N4909

MIN MAX UNIT

-80

V

-0.75

V

-1.5

V

-1.5

V

-1.0

mA

-0.1

mA

-0.1

-2.0

mA

-1.0

mA

20

80

5

4

MHz

SPTECH website：www.superic-tech.com

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