BSX62 Просмотр технического описания (PDF) - Continental Device India Limited

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Компоненты Описание

производитель

BSX62

NPN SILICON PLANAR TRANSISTOR

Continental Device India Limited 

NPN SILICON PLANAR TRANSISTOR

BSX62, BSX63

TO-39

Metal Can Package

ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL TEST CONDITION

BSX62-6 BSX62-10 BSX62-16 UNITS

BSX63-6 BSX63-10 BSX63-16

MIN MAX MIN MAX MIN MAX

DC Current Gain

hFE* IC=0.1A,VCE=1V

IC=1.0A,VCE=1V

IC=2.0A,VCE=5V

30

30

30

40 100 63 160 100 250

25

25

25

CHARACTERISTICS

SYMBOL TEST CONDITION

ALL TYPES

MIN

MAX

DYNAMIC CHARACTERISTICS

Transition Frequency

fT IC=200mA, VCE=10V 30

Collector Base Capacitance

Ccbo VCB=10V, IE=0

70

*Pulse Test: Pulse Width <200µs, Duty Cycle <1.0%

UNITS

MHz

pF

Continental Device India Limited

Data Sheet

Page 2 of 4

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