ICS85222I-02 Data Sheet
1-TO-2, LVCMOS/LVTTL -TO- DIFFERENTIAL HSTL TRANSLATOR
Power Considerations
This section provides information on power dissipation and junction temperature for the ICS85222I-02.
Equations and example calculations are also provided.
1. Power Dissipation.
The total power dissipation for the ICS85222I-02 is the sum of the core power plus the power dissipated in the load(s).
The following is the power dissipation for VDD = 3.3V + 5% = 3.465V, which gives worst case results.
NOTE: Please refer to Section 3 for details on calculating power dissipated in the load.
• Power (core)MAX = VDD_MAX * IDD_MAX = 3.465V * 50mA = 173.25mW
• Power (outputs)MAX = 82.3mW/Loaded Output pair
If all outputs are loaded, the total power is 2 x 82.3mW = 164.6mW
Total Power_MAX (3.465V, with all outputs switching) = 173.3mW + 164.6mW = 337.85mW
2. Junction Temperature.
Junction temperature, Tj, is the temperature at the junction of the bond wire and bond pad and directly affects the reliability of the device. The
maximum recommended junction temperature is 125°C.
The equation for Tj is as follows: Tj = JA * Pd_total + TA
Tj = Junction Temperature
JA = Junction-to-Ambient Thermal Resistance
Pd_total = Total Device Power Dissipation (example calculation is in section 1 above)
TA = Ambient Temperature
In order to calculate junction temperature, the appropriate junction-to-ambient thermal resistance JA must be used. Assuming no air flow and
a multi-layer board, the appropriate value is 103°C/W per Table 5 below.
Therefore, Tj for an ambient temperature of 85°C with all outputs switching is:
85°C + 0.338W * 103°C/W = 119.8°C. This is below the limit of 125°C.
This calculation is only an example. Tj will obviously vary depending on the number of loaded outputs, supply voltage, air flow and the type of
board (single layer or multi-layer).
Table 5. Thermal Resitance JA for 8-Lead SOIC, Forced Convection
JA by Velocity
Meters per Second
0
Multi-Layer PCB, JEDEC Standard Test Boards
103°C/W
1
94°C/W
2.5
89°C/W
ICS85222AMI-02 APRIL 25, 2014
7
©2014 Integrated Device Technology, Inc.