ICS85222I-02 Просмотр технического описания (PDF) - Integrated Device Technology
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ICS85222I-02 Datasheet PDF : 12 Pages
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ICS85222I-02 Data Sheet
1-TO-2, LVCMOS/LVTTL -TO- DIFFERENTIAL HSTL TRANSLATOR
Absolute Maximum Ratings
NOTE: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These ratings are stress
specifications only. Functional operation of the product at these conditions or any conditions beyond those listed in the DC Characteristics or
AC Characteristics is not implied. Exposure to absolute maximum rating conditions for extended periods may affect product reliability.
Item
Supply Voltage, VDD
Inputs, VI
Outputs, IO
Continuous Current
Surge Current
Junction Temperature, TJ
Storage Temperature, TSTG
Rating
4.6V
-0.5V to VDD + 0.5V
50mA
100mA
125°C
-65°C to 150°C
DC Electrical Characteristics
Table 3A. Power Supply DC Characteristics, VDD = 3.3V ± 5%, TA = -40°C to 85°C
Symbol
Parameter
Test Conditions
Minimum
VDD
Positive Supply Voltage
IDD
Power Supply Current
Outputs not loaded
3.135
Typical
3.3
Maximum
3.465
50
Units
V
mA
Table 3B. LVCMOS/LVTTL DC Characteristics, VDD = 3.3V ± 5%, TA = -40°C to 85°C
Symbol
Parameter
Test Conditions
Minimum
VIH
Input High Voltage
2
VIL
Input Low Voltage
-0.3
IIH
Input High Current CLK
VDD = VIN = 3.465V
IIL
Input Low Current CLK
VDD = 3.465V, VIN = 0V
-5
Typical
Maximum
VDD + 0.3
0.8
150
Units
V
V
µA
µA
Table 3C. HSTL DC Characteristics, VDD = 3.3V ± 5%, TA = -40°C to 85°C
Symbol
Parameter
Test Conditions
Minimum
VOH
Output High Voltage; NOTE 1
1.0
VOL
Output Low Voltage; NOTE 1
0
VOX
Output Crossover Voltage
0.5
VSWING
Peak-to-Peak Output
Voltage Swing
0.6
NOTE 1: All outputs must be terminated with 50 to ground.
Typical
1.0
Maximum
1.4
0.4
0.9
1.4
Units
V
V
V
V
ICS85222AMI-02 APRIL 25, 2014
3
©2014 Integrated Device Technology, Inc.
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