BAT62-02L(2003) Просмотр технического описания (PDF) - Infineon Technologies

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Компоненты Описание

производитель

BAT62-02L
(Rev.:2003)

Silicon Schottky Diode

Infineon Technologies 

BAT62...

Maximum Ratings at TA = 25°C, unless otherwise specified

Parameter

Symbol

Diode reverse voltage

VR

Forward current

IF

Total power dissipation

Ptot

BAT62, TS
85 °C

BAT62-02L, -07L4, -03W, TS
108 °C

BAT62-02W, TS
109 °C

BAT62-07W, TS
103 °C

BAT62-08S, -09S, TS
105 °C

Junction temperature

Tj

Storage temperature

Tstg

Thermal Resistance

Parameter

Junction - soldering point1)

BAT62

BAT62-02L, -07L4, -03W

BAT62-02W

BAT62-07W

BAT62-08S

BAT62-09S

Symbol

RthJS

Value

40

20

100

100

100

100

100

150

-55 ... 150

Value

650

420

410

470

450

tbd

Unit

V

mA

mW

°C

Unit

K/W

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

min. typ. max.

DC Characteristics

Reverse current

VR = 40 V

Forward voltage

IF = 2 mA

Forward voltage matching2)

IF = 2 mA

IR

VF

VF

-

-

10

- 0.58 1

-

-

20

1For calculation of RthJA please refer to Application Note Thermal Resistance

Unit

µA

V

mV

2
VF is the difference between lowest and highest VF in a multiple diode component.

2

Jul-21-2003

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