BAT62-08S(2001) Просмотр технического описания (PDF) - Infineon Technologies

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Компоненты Описание

производитель

BAT62-08S
(Rev.:2001)

Silicon Schottky Diode Array

Infineon Technologies 

BAT62-08S

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

DC characteristics

Reverse current

VR = 40 V

IR

-

-

10 µA

Forward voltage

IF = 2 mA

VF

- 0.58 1 V

AC characteristics

Diode capacitance

VR = 0 V, f = 1 MHz

Case capacitance

f = 1 MHz

Differential resistance

VR = 0 V, f = 10 kHz

Series inductance

CT

- 0.35 0.6 pF

CC

-

0.1

-

R0

-

225

- k

Ls

-

1.6

- nH

2

Jul-06-2001

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