SFS9Z24 Просмотр технического описания (PDF) - Fairchild Semiconductor

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SFS9Z24

Advanced Power MOSFET

Fairchild Semiconductor 

SFS9Z24

P-CHANNEL

POWER MOSFET

Electrical Characteristics (TC=25oC unless otherwise specified)

Symbol

BVDSS

∆BV/∆TJ

VGS(th)

IGSS

IDSS

RDS(on)

gfs

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

Characteristic

Min. Typ. Max. Units

Test Condition

Drain-Source Breakdown Voltage

Breakdown Voltage Temp. Coeff.

Gate Threshold Voltage

Gate-Source Leakage , Forward

Gate-Source Leakage , Reverse

Drain-to-Source Leakage Current

-60 -- -- V

-- -0.04 -- V/oC

-2.0 -- -4.0 V

-- -- -100

nA

-- -- 100

-- -- -10

-- -- -100 µA

VGS=0V,ID=-250µA

ID=-250µA See Fig 7

VDS=-5V,ID=-250µA

VGS=-20V

VGS=20V

VDS=-60V

VDS=-48V,TC=150oC

Static Drain-Source

On-State Resistance

-- -- 0.28 Ω VGS=-10V,ID=-3.8A O4

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

-- 3.6 -- S VDS=-30V,ID=-3.8A O4

-- 465 600

-- 140 215 pF VGS=0V,VDS=-25V,f =1MHz

See Fig 5

-- 40 60

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

-- 11 30

--

--

21

29

50

65

VDD=-30V,ID=-9.7A,

ns RG=18 Ω

-- 20 50

See Fig 13 O4 O5

Total Gate Charge

Gate-Source Charge

Gate-Drain(“Miller”) Charge

-- 15 19

VDS=-48V,VGS=-10V,

-- 2.9 -- nC ID=-9.7A

-- 6.0 --

See Fig 6 & Fig 12 O4 O5

Source-Drain Diode Ratings and Characteristics

Symbol

IS

ISM

VSD

trr

Qrr

Characteristic

Continuous Source Current

Pulsed-Source Current

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Min. Typ. Max. Units

Test Condition

--

O1 --

-- -7.5

Integral reverse pn-diode

A

-- -30

in the MOSFET

O4 -- -- -3.8 V TJ=25oC,IS=-7.5A,VGS=0V

-- 80 -- ns TJ=25oC,IF=-9.7A

-- 0.22 -- µC diF/dt=100A/µs

O4

Notes ;

O1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature

O2 L=3.0mH, IAS=-7.5A, VDD=-25V, RG=27Ω*, Starting TJ =25oC

O3 ISD <_ -9.7A, di/dt <_ 250A/µs, VDD<_ BVDSS , Starting TJ =25oC

O4 Pulse Test : Pulse Width = 250µs, Duty Cycle<_ 2%

O5 Essentially Independent of Operating Temperature

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