2SC4746 Просмотр технического описания (PDF) - New Jersey Semiconductor
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2SC4746 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc= 10mA; RBE= M
V(BR)EBO Emitter-Base Breakdown Voltage
lE=10mA; lc=0
VcE(sat) Collector-Emitter Saturation Voltage IC=7A;IB= 1.4A
VeE(sat) Base-Emitter Saturation Voltage
IC=7A;IB=1.4A
ICES
Collector Cutoff Current
VCE= 1500V; RBE=0
hFE
DC Current Gain
lc=1A;VCE=5V •
tf
Fall Time
lcp=7A,lBi=1.4A
2SC4746
MIN TYP. MAX UNIT
800
V
6
V
5.0
V
1.5
V
500 u A
8
38
0.5 u s
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