2SC4940 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SC4940 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4940
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0
VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A
VBEsat Base-emitter saturation voltage
IC=2A; IB=0.4A
ICBO
Collector cut-off current
ICEO
Collector cut-off current
IEBO
Emitter cut-off current
At rated volatge
At rated volatge
hFE-1
DC current gain
IC=2A ; VCE=5V
hFE-2
DC current gain
IC=1mA ; VCE=5V
fT
Transition frequency
IC=0.4A ; VCE=10V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=2A;IB1=0.4A
IB2=0.8A ,RL=75Ω
VBB2=4V
MIN TYP. MAX UNIT
550
V
1.0
V
1.5
V
0.1
mA
0.1
mA
10
10
10
MHz
0.8
μs
3.0
μs
0.3
μs
2
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