PUMD16 Просмотр технического описания (PDF) - Philips Electronics
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PUMD16 Datasheet PDF : 10 Pages
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Philips Semiconductors
PEMD16; PUMD16
NPN/PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ
103
hFE
102
10
006aaa198
(1)
(2)
(3)
−103
VCEsat
(mV)
−102
(1)
(2)
(3)
006aaa199
1
−10−1
−1
−10
−102
IC (mA)
VCE = −5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 5. TR2 (PNP): DC current gain as a function of
collector current; typical values
−104
006aaa200
−10
−10−1
−1
−10
−102
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 6. TR2 (PNP): Collector-emitter saturation voltage
as a function of collector current; typical values
−104
006aaa201
VI(on)
(mV)
(1)
(2)
−103
(3)
VI(off)
(mV)
−103
(1)
(2)
(3)
−102
−10−1
−1
−10
−102
IC (mA)
−102
−10−2
−10−1
−1
−10
IC (mA)
VCE = −0.3 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 7. TR2 (PNP): On-state input voltage as a function
of collector current; typical values
VCE = −5 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 8. TR2 (PNP): Off-state input voltage as a function
of collector current; typical values
9397 750 15178
Product data sheet
Rev. 02 — 7 June 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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