MMBTA13 Просмотр технического описания (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd
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MMBTA13 Datasheet PDF : 4 Pages
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
MMBTA13，14 TRANSISTOR（NPN）
FEATURES
SOT— 23
1. BASE
2. EMITTER
3. COLLECTOR
Power dissipation
PCM : 0.3W（Tamb=25℃）
Collector current
ICM: 0.3A
Collector-base voltage
V(BR)CBO : 30V
Operating and storage junction temperature range
TJ，Tstg: -55℃ to +150
２．４
１．３
Unit : mm
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter
Symbol
Test conditions
MIN MAX
Collector-base breakdown voltage
V(BR)CBO
Ic= 100μA， IE=0
30
Collector-emitter breakdown voltage
V(BR)CEO
Ic= 100uA， IB=0
30
Collector-emitter breakdown voltage
V(BR)EBO
IE= 100μA， Ic=0
10
Collector cut-off current
ICBO
VCB=30 V , IE=0
0.1
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
IEBO
VEB= 10V , IC=0
0.1
hFE(1) *
VCE=5V, IC= 10m A
VCE=5 V, IC= 100mA
hFE(2) *
MMBTA13 5000
MMBTA14 10000
MMBTA13 10000
MMBTA14 20000
VCE (sat) * IC=100 mA, IB=0.1m A
1.5
Base-emitter voltage
VBE *
VCE=5V,IC= 100mA
2.0
Transition frequency
fT
VCE=5V, IC= 10mA
125
f=100MHz
UNIT
V
V
V
μA
μA
V
V
MHz
* Pulse Test : pulse width≤３００μｓ，ｄｕｔｙ ｃｙｃｌｅ≤２％。
Marking : MMBTA13:1M；MMBTA14：1N
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