MJ15016 Просмотр технического описания (PDF) - SavantIC Semiconductor

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производитель

MJ15016

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

Product Specification

MJ15016

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=-0.2A ;IB=0

VCE(sat)-1 Collector-emitter saturation voltage IC=-4A; IB=-0.4A

VCE(sat)-2 Collector-emitter saturation voltage IC=-10A; IB=-3.3A

VCE(sat)-3 Collector-emitter saturation voltage IC=-15A; IB=-7.0A

VBE

Base-emitter on voltage

IC=-4A ; VCE=-4V

ICEO

Collector cut-off current

ICEV

Collector cut-off current

IEBO

Emitter cut-off current

VCE=-60V; VBE(off)=0

VCE=Rated Value; VBE(off)=1.5V

TC=150

VEB=-7V; IC=0

hFE-1

DC current gain

IC=-4A ; VCE=-2V

hFE-2

DC current gain

IC=-4A ; VCE=-4V

hFE-3

Is/b

COB

fT

DC current gain

IC=-10A ; VCE=-4V

Second breakdown collector current VCE=-60Vdc,t=0.5 s,

With base forward biased

Nonrepetitive

Output capacitance

IE=0 ; VCB=-10V;f=1.0MHz

Transition frequency

IC=-1A ; VCE=-4V;f=1.0MHz

MIN TYP. MAX UNIT

-120

V

-1.1

V

-3.0

V

-5.0

V

-1.8

V

-0.1 mA

-1.0

-6.0

mA

-0.2 mA

10

70

20

70

5

-3.0

A

60

600 pF

2.2

MHz

2

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