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FZT753TC Просмотр технического описания (PDF) - Diodes Incorporated.

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FZT753TC Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
A Product Line of
Diodes Incorporated
FZT753
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 12)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage (Note 12)
Base-Emitter Saturation Voltage (Note 12)
Base-Emitter Turn-On Voltage (Note 12)
DC Current Gain (Note 12)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
VBE(on)
hFE
Min
-120
-100
-7


70
100
55
25
Typ
<1

<1
-0.17
-0.30
-0.9
-0.8
200
200
170
55
Current Gain-Bandwidth Product
fT
100 140
Turn-On Time
Turn-Off Time
Output Capacitance
ton
toff
Cobo
40
600
Note:
12. Measured under pulsed conditions. Pulse width 300µs. Duty cycle ≤ 2%.
Max
-100
-10
-100
-0.3
-0.5
-1.25
-1.0
300


30
Unit
V
V
V
nA
µA
nA
V
V
V
MHz
ns
ns
pF
Test Condition
IC = -100µA
IC = -1mA
IE = -100µA
VCB = -100V
VCB = -100V, TA = +125°C
VEB = -5.6V
IC = -1A, IB = -100mA
IC = -2A, IB = -200mA
IC = -1A, IB = -100mA
IC = -1A, VCE = -2V
IC = -50mA, VCE = -2V
IC = -500mA, VCE = -2V
IC = -1A, VCE = -2V
IC = -2A, VCE = -2V
VCE = -5V, IC = -100mA
f = 100MHz
VCC = -10V, IC = -500mA
IB1 = -IB2 = -50mA
VCB = -10V, f = 1MHz
FZT753
Document Number DS33163 Rev. 6 - 2
4 of 7
www.diodes.com
June 2015
© Diodes Incorporated

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