MITSUBISHI Nch POWER MOSFET
FS12VS-5
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
V (BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
VDS = 250V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 6A, VGS = 10V
ID = 6A, VGS = 10V
ID = 6A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 150V, ID = 6A, VGS = 10V, RGEN = RGS = 50Ω
IS = 6A, VGS = 0V
Channel to case
Limits
Unit
Min.
Typ. Max.
250
—
—
V
±30
—
—
V
—
—
±10
µA
—
—
1
mA
2
3
4
V
—
0.32
0.40
Ω
—
1.90
2.40
V
5.0
7.5
—
S
—
720
—
pF
—
150
—
pF
—
30
—
pF
—
18
—
ns
—
35
—
ns
—
80
—
ns
—
40
—
ns
—
1.5
2.0
V
—
—
1.25 °C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
200
160
120
80
40
0
0
50
100
150
200
CASE TEMPERATURE TC (°C)
OUTPUT CHARACTERISTICS
(TYPICAL)
50
PD = 100W
40
TC = 25°C
Pulse Test
VGS = 20V
10V
30
7V
20
6V
10
5V
0
0
10 20 30 40 50
DRAIN-SOURCE VOLTAGE VDS (V)
MAXIMUM SAFE OPERATING AREA
5
3
tw=10µs
2
101
100µs
7
5
3
1ms
2
100
7
10ms
5
DC
3
2 TC = 25°C
Single Pulse
10–1
7
5
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
20
VGS = 20V 10V 7V
PD =
100W
TC = 25°C
Pulse Test
16
12
6V
8
4
5V
0
0
4
8
12 16 20
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999