Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH64D72KLG-75,-10
4,831,838,208-BIT (67,108,864-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module
ABSOLUTE M AXIMUM RATINGS
Symbol
Parameter
Conditions
Ratings
Unit
Vdd
Supply Voltage
with respect to Vss
-0.5 ~ 3.7
V
VddQ Supply Voltage for Output with respect to VssQ
-0.5 ~ 3.7
V
VI
Input Voltage
with respect to Vss -0.5 ~ Vdd+0.5
V
VO
Output Voltage
with respect to VssQ -0.5 ~ VddQ+0.5 V
IO
Output Current
50
mA
Pd
Power Dissipation
Ta = 25 C
20
W
Topr
Operating Temperature
0 ~ 70
C
T stg
Storage Temperature
-40 ~ 100
C
DC OPERATING CONDITIONS
(Ta=0 ~ 70OC , unless otherwise noted)
Symbol
Parameter
Min.
Limits
Typ.
Vdd/VddQ
Supply Voltage
2.3
2.5
Vref
Input Reference Voltage
1.15
1.25
VIH(DC)
High-Level Input Voltage
Vref + 0.18
VIL(DC)
Low-Level Input Voltage
-0.3
VIN(DC) Input Voltage Level, CK0 and /CK0
-0.3
VID(DC) Input Differential Voltage, CK0 and /CK0 0.36
VTT
I/O Termination Voltage
Vref - 0.04
Max.
Unit Notes
2.7
V
1.35
V5
VddQ+0.3 V
Vref - 0.18 V
VddQ + 0.3 V
VddQ + 0.6 V 7
Vref + 0.04 V 6
CAPACITANCE
(Ta=0 ~ 70OC, Vdd = VddQ = 2.5 ± 0.2V, Vss = VssQ = 0V, unless otherwise noted)
Symbol
Parameter
Test Condition
CI(A) Input Capacitance, address pin
CI(C) Input Capacitance, control pin
CI(K) Input Capacitance, CK0 pin
CI/O Input Capacitance, I/O pin
VI - 1.25V
f =100MHz
VI = 25mVrm
Limits(max.)
7.5
7.5
16.0
11.0
Unit Notes
pF 11
pF 11
pF 11
pF 11
MIT-DS-0389-1.1
MITSUBISHI ELECTRIC
20.Nov.2000
16