BSS123E6327(2002) Просмотр технического описания (PDF) - Infineon Technologies

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Компоненты Описание

производитель

BSS123E6327
(Rev.:2002)

SIPMOS® Small-Signal-Transistor

Infineon Technologies 

Rev. 1.0

BSS123

5 Typ. output characteristic

ID = f (VDS)

parameter: Tj = 25 °C, VGS

0.7

A 10V

5V

0.6

4.5V

4.1V

0.55 3.9V

3.7V

0.5 3.5V

0.45 3.1V

2.9V

0.4 2.3V

0.35

0.3

0.25

0.2

0.15

0.1

0.05

0

0 0.5 1 1.5 2 2.5 3 3.5 4 V 5

VDS

7 Typ. transfer characteristics

ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max

parameter: Tj = 25 °C

0.7

A

6 Typ. drain-source on resistance

RDS(on) = f (ID)

parameter: Tj = 25 °C, VGS

20

2.3V

Ω

2.9V

3.1V

16

3.5V

3.7V

3.9V

14

4.1V

4.5V

12

5.0V

10V

10

8

6

4

2

0

0 0.1 0.2 0.3 0.4 0.5 A 0.7

ID

8 Typ. forward transconductance

gfs = f(ID)

parameter: Tj = 25 °C

0.4

S

0.3

0.5

0.25

0.4

0.2

0.3

0.15

0.2

0.1

0.1

0.05

0

0 0.5 1 1.5 2 2.5 3 3.5 4 V 5

VGS

Page 5

0

0 0.1 0.2 0.3 0.4 0.5 A 0.7

ID

2002-12-10

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