BLF242 Просмотр технического описания (PDF) - New Jersey Semiconductor

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производитель

BLF242

HF/VHF power MOS transistor

New Jersey Semiconductor 

HF/VHF power MOS transistor

BLF242

CHARACTERISTICS

Ti = 25 °C unless otherwise specified.

SYMBOL

V(BR)DSS

IDSS

IGSS

Vcs(th)

9fs

Ros(on)

IDSX

Cis

Cos

Crs

PARAMETER

drain-source breakdown voltage

drain-source leakage current

gate-source leakage current

gate-source threshold voltage

forward transconductance

drain-source on-state resistance

on-state drain current

input capacitance

output capacitance

feedback capacitance

CONDITIONS

VGs = 0; |D= 0-1 mA

VGs = 0; VDS = 28 V

±VGS = 20 V; VDS = 0

ID = 3mA; VDS = 10V

ID = 0.3 A; VDS = 10V

ID = 0.3 A; VGS =1 V

VGS = 10V; VGS = 10V

VGS = 0; VDS = 28 V; f = 1 MHz

VGS = 0; VDS = 28 V; f = 1 MHz

VGS = 0; VDS= 28 V; f = 1 MHz

MIN. TYP. MAX. UNIT

65 - -

V

- - 10 HA

--

1

HA

2 - 4.5 V

0.16 0.24 _

S

-

3.3 5

n

-

1.2 -

A

-

13 -

PF

- 9.4 -

PF

- 1.7 -

pF

T.C.

(mV/K)

1.5 r

VDS = 10V.

,D(mA)

Fig.4 Temperature coefficient of gate-source

voltage as a function of drain current, typical

values.

VGS(V)

VDS = 1

Fig.5 Drain current as a function of gate-source

voltage, typical values.

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