BDX53F Просмотр технического описания (PDF) - New Jersey Semiconductor
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BDX53F Datasheet PDF : 2 Pages
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Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcEO(SUS) Collector-Emitter Sustaining Voltage lc= 50mA;lB=0
VcE(sat) Collector-Emitter Saturation Voltage lc=2A; IB= 10mA
VBE(sat) Base-Emitter Saturation Voltage
VECF C-E Diode Forward Voltage
lc=2A;la=10mA
IF=2A
ICEO
Collector Cutoff Current
VCE= 80V; IB= 0
ICBO
Collector Cutoff Current
VCB=160V;IE=0
IEBO
Emitter Cutoff Current
VEB= 5V; lc= 0
hpE-1 DC Current Gain
lc= 2A ; VCE= 5V
hFE-2
DC Current Gain
lc=3A; VOE=5V
BDX53F
MIN TYP. MAX UNIT
160
V
2.0
V
2.5
V
2.5
V
0.5 mA
0.2 mA
5
mA
500
150
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