BC846B Просмотр технического описания (PDF) - Diotec Semiconductor Germany

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производитель

BC846B

SMD General Purpose NPN Transistors

Diotec Semiconductor Germany  

BC846A ... BC850C

Characteristics

Tj = 25°C

DC current gain – Kollektor-Basis-Stromverhältnis

VCE = 5 V, IC = 10 µA

Group A

Group B

hFE

Group C

VCE = 5 V, IC = 2 mA

Group A

Group B

hFE

Group C

Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 1)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)

VCEsat

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

Base-Emitter-voltage – Basis-Emitter-Spannung 2)

VBEsat

VCE = 5 V, IC = 2 mA

VCE = 5 V, IC = 10 mA

VBE

Collector-Base cutoff current – Kollektor-Basis-Reststrom

VCB = 30 V, (E open)

VCE = 30 V, Tj = 125°C, (E open)

ICBO

Emitter-Base cutoff current

VEB = 5 V, (C open)

IEBO

Gain-Bandwidth Product – Transitfrequenz

VCE = 5 V, IC = 10 mA, f = 100 MHz

fT

Collector-Base Capacitance – Kollektor-Basis-Kapazität

VCB = 10 V, IE =ie = 0, f = 1 MHz

CCBO

Emitter-Base Capacitance – Emitter-Basis-Kapazität

VEB = 0.5 V, IC = ic = 0, f = 1 MHz

CEBO

Thermal resistance junction to ambient

Wärmewiderstand Sperrschicht – Umgebung

RthA

Min.

Typ.

Kennwerte

Max.

–

90

–

–

150

–

–

270

–

110

180

220

200

290

450

420

520

800

–

90 mV

250 mV

–

200 mV 600 mV

–

700 mV

–

–

900 mV

–

580 mV

–

660 mV

–

700 mV

720 mV

–

–

15 nA

–

–

5 µA

–

–

100 nA

–

300 MHz

–

–

3.5 pF

6 pF

–

9 pF

–

< 420 K/W 2)

Disclaimer: See data book page 2 or website

Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet

1 Tested with pulses tp = 300 µs, duty cycle ≤ 2%

Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

2 Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

2

http://www.diotec.com/

© Diotec Semiconductor AG

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