BB101M Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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производитель

BB101M

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Hitachi -> Renesas Electronics 

BB101M

Absolute Maximum Ratings (Ta = 25°C)

Item

Drain to source voltage

Gate 1 to source voltage

Symbol

VDS

VG1S

Gate 2 to source voltage

Drain current

Channel power dissipation

Channel temperature

Storage temperature

VG2S

ID

Pch

Tch

Tstg

Ratings

Unit

6

V

+6

V

–0

±6

V

25

mA

150

mW

150

°C

–55 to +150

°C

2

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