KTA1666 Просмотр технического описания (PDF) - Galaxy Semi-Conductor

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производитель

KTA1666

PNP Silicon Epitaxial Planar Transistor

Galaxy Semi-Conductor 

Production specification

PNP Silicon Epitaxial Planar Transistor

FEATURES

Pb

z High speed switching time.

Lead-free

z Low saturation voltage:VCE(sat)=-0.5V(Max)

z PC=1~2W(Mounted on ceramic substrate)

z Small flat package.

z Complementary: KTC4379.

KTA1666

APPLICATIONS

z Power amplifier application.

z Power switching application.

ORDERING INFORMATION

Type No.

Marking

KTA1666

WO/WY

SOT-89

Package Code

SOT-89

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Base Current

Collector Dissipation

Junction Temperature

Storage Temperature Range

-50

-50

-5

-2

-0.4

500

150

-55 to +150

Units

V

V

V

A

A

mW

℃

℃

E001

Rev.A

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