MMBT5401W Просмотр технического описания (PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

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Компоненты Описание

производитель

MMBT5401W

Silicon PNP transistor in a SOT-323 Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

MMBT5401W

Rev.E Mar.-2016

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Base Current - Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

符号

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

DATA SHEET

数值

Rating

-180

-160

-6.0

-600

-300

200

150

-55～150

单位

Unit

V

V

V

mA

mA

mW

℃

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

符号

Symbol

测试条件

Test Conditions

Collector Cut-Off Current

ICBO VCB=-180V IE=0

Emitter to Base Current

IEBO VEB=-6.0V IC=0

hFE(1) VCE=-5.0V IC=-10mA

DC Current Gain

hFE(2) VCE=-5.0V IC=-50mA

hFE(3) VCE=-5.0V IC=-1.0mA

Collector to Emitter Saturation

Voltage

VCE(sat) (1) IC=-10mA

VCE(sat) (2) IC=-50mA

IB=-1.0mA

IB=-5.0mA

VBE(sat) (1) IC=-10mA

Base to Emitter Saturation Voltage

VBE(sat) (2) IC=-50mA

IB=-1.0mA

IB=-5.0mA

Base to Emitter Voltage

VBE

VCE=-5.0V IC=-10mA

Transition Frequency

Collector output capacitance

fT VCE=-10V IE=-10mA

Cob

VCB=-10V

f=10MHz

IE=0

Turn-On Time

Turn-Off Time

Storage Time

ton

toff

IC=-100mA

-IB1=IB2=-10mA

tstg

最小值 典型值 最大值 单位

Min Typ Max Unit

-0.1 μA

-0.1 μA

50 200 400

20 70

40 180

-0.12 -0.4 V

-0.5 -0.8 V

-0.75 -1.0 V

-0.8 -1.0 V

-0.7 -0.75 V

50 80

MHz

2.5 5.0 pF

0.1

μs

0.2

μs

0.1

μs

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