IRFN250 Просмотр технического описания (PDF) - International Rectifier

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производитель

IRFN250

200V, N-CHANNEL POWER MOSFET SURFACE MOUNT(SMD-1)

International Rectifier 

Footnotes:

➀ Repetitive Rating; Pulse width limited by

maximum junction temperature.

➁ VDD = 25V, starting TJ = 25°C, L= 1.3mH

Peak IL = 27.4A, VGS = 10V

IRFN250

➂ ISD ≤ 27.4A, di/dt ≤ 190A/µs,

VDD ≤ 200V, TJ ≤ 150°C

➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

Case Outline and Dimensions — SMD-1

PAD ASSIGNMENTS

1- DRAIN

2- GATE

3- SOURCE

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 01/02

www.irf.com

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