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BYG23MHE3_A/H Просмотр технического описания (PDF) - Vishay Semiconductors

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производитель
BYG23MHE3_A/H
VISHAYSEMICONDUCTOR
Vishay Semiconductors 
BYG23MHE3_A/H Datasheet PDF : 5 Pages
1 2 3 4 5
www.vishay.com
BYG23M
Vishay General Semiconductor
Ultrafast Avalanche SMD Rectifier
SMA (DO-214AC)
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated pellet chip junction
• Low reverse current
• High reverse voltage
• Ultra fast reverse recovery time
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code P/NHE3 or P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
IF(AV)
1.5 A
VRRM
IFSM
1000 V
30 A
IR
5.0 μA
trr
75 ns
VF
1.7 V
ER
20 mJ
TJ max.
150 °C
Package
SMA (DO-214AC)
Circuit configuration
Single
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, automotive and telecommunication.
MECHANICAL DATA
Case: SMA (DO-214AC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHE3_X - RoHS-compliant, and AEC-Q101
qualified
Base P/NHM3_X - halogen-free, RoHS-compliant and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,...)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3, M3, HE3, and HM3 suffix meet JESD 201 class 2
whisker test
Polarity: color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Average forward current at TA = 65 °C
Peak forward surge current 10 ms single half sine-wave superimposed on rated load
Pulse energy in avalanche mode, non repetitive (inductive load switch off)
I(BR)R = 1 A, TJ = 25 °C
Operating junction and storage temperature range
SYMBOL
VRRM
IF(AV)
IFSM
ER
TJ, TSTG
BYG23M
BYG23M
1000
1.5
30
20
-55 to +150
UNIT
V
A
A
mJ
°C
Revision: 09-Aug-2018
1
Document Number: 88962
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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