2SC3169 Просмотр технического описания (PDF) - New Jersey Semiconductor
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2SC3169 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcEO(SUS) Collector-Emitter Sustaining Voltage lc= 0.2A; L= 25mH
VcE(sat) Collector-Emitter Saturation Voltage lc= 1A; IB= 0.2A
VsE(sat) Base-Emitter Saturation Voltage
lc= 1A; IB= 0.2A
ICBO
Collector Cutoff Current
VCB= 500V; IE= 0
IEBO
Emitter Cutoff Current
hpE-1
DC Current Gain
VEB= 5V; lc= 0
lc= 0.1 A; VCE= 5V
hFE-2
DC Current Gain
lc= 1A;VCE=5V
fy
Current-Gain—Bandwidth Product lc= 0.2A; VCE= 10V
Switching Times; Resistive Load
ton
Turn-on Time
ts
Storage Time
tf
Fall Time
lc= 1A;IB1=-IB2-0.2A;
Vcc= 100V
2SC3169
MIN TYP. MAX UNIT
400
V
1.0
V
1.5
V
0.1 mA
0.1 mA
15
8
8
MHz
1.0
us
3.0
us
1.0
ns
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