2SC2921 Просмотр технического описания (PDF) - New Jersey Semiconductor
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2SC2921 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
2SC2921
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc= 25mA; IB= 0
VcE(sat) Collector-Emitter Saturation Voltage lc= 5A; IB= 0.5A
ICBO
Collector Cutoff Current
VCB= 160V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; lc= 0
HFE
DC Current Gain
lc= 5A; VCE= 4V
COB
Output Capacitance
ft
Current-Gain—Bandwidth Product
lE=0;VcB=10V;f,eSt= 1,0MHz
IE=-2A;VCE= 12V
Switching times
ton
Turn-on Time
'stg
Storage Time
tf
Fall Time
lc= 5A; RL= 12D,
IB1= -Is2= 0.5A, Veer 60V
MIN TYP. MAX UNIT
160
V
2.0
V
100 M A
100 M A
50
180
200
PF
10
MHz
0.2
Ms
1.5
MS
0.35
Ms
• hFE Classifications
0
P .Y
50-100 70-140 90-180
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