2SB1161 Просмотр технического описания (PDF) - New Jersey Semiconductor
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2SB1161 Datasheet PDF : 2 Pages
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^E.mi-Concmctoi L/^roaucti, Lfnc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SB1161
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
:V(BR)CEo=-160V(Min)
• Good Linearity of hFE
• Wide Area of Safe Operation
• Complement to Type 2SD1716
APPLICATIONS
• Designed for high power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-160
V
VCEO
Collector-Emitter Voltage
-160
V
VEBO
Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-12
A
ICP
Collector Current-Pulse
Collector Power Dissipation
@ TC=25-C
PC
Collector Power Dissipation
@ Ta=25'C
Tj
Junction Temperature
-20
A
120
W
3
150
'C
Tstg
Storage Temperature Range
-55-150
'C
v
«
to
123
^
!
A
1 --<
3
PIN 1.BASE
2. COLLECTOR
3 EMITTER
TO-3PFs package
i—
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i :\
i
K .„, "c)
i
T
«--^
—P. -*.-R
mm
DIM MIN MAX
A 20,70 21.30
B 14.70 15.30
C 4.80 5.20
D 0.90 1.10
F
3.20 3.40
K
3.70 4.30
J
0.50 0.70
K 16.40 17.00
L
1,90 2,10
N 10.80 11,00
q
5.60 6,00
R
1,30 2.20
S
3.10 3.50
T
8.70 9.30
U 0.55 0,75
«
N,l Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by N.I Semi-Conductors is believed to he both accurate and reliable at the time of goinii
In press. I hmever, N.I Semi-Condtictors assumes no responsibility for an> errors or omissions discovered in its use.
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