ST083S08PFH1(1994) Просмотр технического описания (PDF) - International Rectifier
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ST083S08PFH1 Datasheet PDF : 9 Pages
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ST083S Series
Bulletin I25185 rev. B 03/94
On-state Conduction
Parameter
VTM Max. peak on-state voltage
VT(TO)1 Low level value of threshold
voltage
VT(TO)2 High level value of threshold
voltage
rt1
Low level value of forward
slope resistance
rt2
High level value of forward
slope resistance
IH
Maximum holding current
IL
Typical latching current
ST083S
2.15
1.46
Units Conditions
ITM= 300A, TJ = TJ max, tp = 10ms sine wave pulse
V
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
1.52
(I
>
π
x
I ),
T(AV)
T
J
=
T
J
max.
2.32
2.34
600
1000
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
mΩ
(I
>
π
x
I ),
T(AV)
T
J
=
T
J
max.
mA TJ = 25°C, IT > 30A
TJ = 25°C, VA= 12V, Ra = 6Ω, IG= 1A
Switching
Parameter
ST083S Units Conditions
di/dt Max. non-repetitive rate of rise
of turned-on current
td
Typical delay time
tq
Max. turn-off time (*)
1000
0.80
Min Max
10 30
A/µs
µs
TJ = TJ max, VDRM = rated VDRM
ITM = 2 x di/dt
TJ= 25°C, VDM = rated VDRM, ITM = 50A DC, tp= 1µs
Resistive load, Gate pulse: 10V, 5Ω source
TJ = TJ max, ITM = 100A, commutating di/dt = 10A/µs
VR = 50V, tp = 200µs, dv/dt: see table in device code
(*) tq = 10 to 20µs for 400 to 800V devices; tq = 15 to 30µs for 1000 to 1200V devices.
Blocking
Parameter
dv/dt
I
RRM
IDRM
Maximum critical rate of rise of
off-state voltage
Max. peak reverse and off-state
leakage current
ST083S
500
30
Units Conditions
V /µ s
TJ = TJ max., linear to 80% VDRM, higher value
available on request
mA TJ = TJ max, rated VDRM/VRRM applied
Triggering
Parameter
PGM Maximum peak gate power
P
Maximum average gate power
G(AV)
IGM Max. peak positive gate current
+VGM Maximum peak positive
gate voltage
-V
GM
IGT
VGT
IGD
VGD
Maximum peak negative
gate voltage
Max. DC gate current required
to trigger
Max. DC gate voltage required
to trigger
Max. DC gate current not to trigger
Max. DC gate voltage not to trigger
ST083S
40
5
5
20
5
Units Conditions
W T = T max, f = 50Hz, d% = 50
JJ
A TJ = TJ max, tp ≤ 5ms
V TJ = TJ max, tp ≤ 5ms
200
3
20
0.25
mA
TJ = 25°C, VA = 12V, Ra = 6Ω
V
mA
V
TJ = TJ max, rated VDRM applied
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