TIP31D Просмотр технического описания (PDF) - Power Innovations
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TIP31D Datasheet PDF : 6 Pages
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TIP31D, TIP31E, TIP31F
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
1000
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
TCS631AA
VCE = 4 V
TC = 25°C
tp = 300 µs, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
TCS631AB
10
1·0
100
10
0·001
0·01
0·1
1·0
IC - Collector Current - A
Figure 1.
0·1
IC = 100 mA
IC = 300 mA
IC = 1 A
IC = 3 A
0·01
10
0·1
1·0
10
100
1000
IB - Base Current - mA
Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
TCS631AC
1·0
VCE = 4 V
TC = 25°C
0·9
0·8
0·7
0·6
0·5
0·01
0·1
1·0
10
IC - Collector Current - A
Figure 3.
PRODUCT INFORMATION
3
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