NXP Semiconductors
NPN general purpose transistors
Product data sheet
PMBT6428; PMBT6429
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
PMBT6428
PMBT6429
collector-emitter voltage
PMBT6428
PMBT6429
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
MAX.
UNIT
−
60
V
−
55
V
−
50
V
−
45
V
−
6
V
−
100
mA
−
200
mA
−
200
mA
−
250
mW
−65
+150
°C
−
150
°C
−65
+150
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-a)
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
2004 Jan 22
3