FDMA430NZ Просмотр технического описания (PDF) - ON Semiconductor
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FDMA430NZ Datasheet PDF : 7 Pages
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FDMA430NZ
Single N-Channel 2.5V Specified PowerTrench® MOSFET
30V, 5.0A, 40m:
General Description
This Single N-Channel MOSFET has been designed using
ON Semiconductor’s advanced Power Trench process
to optimize the RDS(on) @VGS=2.5V on special MicroFET
leadframe.
Applications
Li-lon Battery Pack
Pin 1
DD G
Features
RDS(on) = 40m: @ VGS = 4.5 V, ID = 5.0A
RDS(on) = 50m: @ VGS = 2.5 V, ID = 4.5A
Low Profile-0.8mm maximum-in the new package
MicroFET 2x2 mm
HBM ESD protection level > 2.5k V typical (Note 3)
Free from halogenated compounds and antimony oxides
RoHS Compliant
Drain
Source
S4
D5
3G
2D
DD S
MicroFET 2X2 (Bottom View)
D6
1D
Bottom Drain Contact
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current -Continuous
-Pulsed
(Note 1a)
PD
Power dissipation (Steady State)
(Note 1a)
(Note 1b)
TJ, TSTG Operating and Storage Junction Temperature Range
Thermal Characteristics
RTJA
RTJA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
430
Device
FDMA430NZ
Reel Size
7”
Tape Width
8 mm
Ratings
30
r12
5.0
20
2.4
0.9
-55 to +150
Units
V
V
A
W
oC
52
oC/W
145
Quantity
3000 units
©2009 Semiconductor Components Industries, LLC.
1
October-2017, Rev. 2
Publication Order Number:
FDMA430NZ/D
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