BD708 Просмотр технического описания (PDF) - Inchange Semiconductor
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производитель
BD708 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
BD708 BD710 BD712
DESCRIPTION
·With TO-220C package
·Complement to type BD707/709/711
APPLICATIONS
·Intented for use in power linear
and switching applications.
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
BD708
VCBO
Collector-base voltage
BD710
BD712
BD708
VCEO
Collector-emitter voltage BD710
BD712
VEBO
Emitter-base voltage
IC
Collector current-DC
ICM
Collector current-Pulse
IB
Base current
PT
Total dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
-60
-80
-100
-60
-80
-100
-5
-12
-18
-5
75
150
-65~150
UNIT
V
V
V
A
A
A
W
℃
℃
MAX
1.67
UNIT
℃/W
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