CS5124XDR8G Просмотр технического описания (PDF) - ON Semiconductor
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CS5124XDR8G Datasheet PDF : 11 Pages
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CS5124
ELECTRICAL CHARACTERISTICS (−40°C ≤ TJ ≤ 125°C; −40°C ≤ TA ≤ 105°C, 7.60 V ≤ VCC ≤ 20 V, UVLO = 3.0 V,
ISENSE = 0 V, CV(CC) = 0.33 mF, CGATE = 1.0 nF (ESR = 10 W); CSS = 470 pF; CV(FB) = 100 pF, unless otherwise specified.)
Characteristic
Test Conditions
Min
Typ
Max
General
ICC Operating − VGATE not switching
−
ICC at VCC Low
VCC = 6.0 V
ICC Sleep
VUVL = 1.0 V
Low VCC Lockout
VCC Turn−on Threshold Voltage
−
VCC Turn−off Threshold Voltage
−
VCC Hysteresis
−
UVLO
−
10
13
−
500
750
−
210
275
7.2
7.7
8.3
6.8
7.3
7.8
350
425
500
Sleep Threshold Voltage
UVLO decreasing
1.5
1.8
2.3
Sleep Threshold Voltage
UVLO increasing
−
1.88
2.45
Sleep Hysteresis
−
35
85
150
UVLO Turn−off Threshold Voltage
(Note 2)
2.3
2.45
2.6
UVLO Turn−on Threshold Voltage
(Note 2)
2.50
2.63
2.76
UVLO Hysteresis
UVLO Hysteresis
UVLO Input Bias Current
Turn−on − Turn−off (−40°C ≤ TJ ≤ 100°C) (Note 2)
170
185
200
Turn−on − Turn−off (100°C ≤ TJ ≤ 125°C) (Note 2)
50
185
400
−
−1.0
−
1.0
UVLO Clamp
With UVLO sinking 1.0 mA
5.0
7.5
12
VCC Clamp and BIAS Pin
VCC Clamp Voltage
BIAS Minimum Voltage
BIAS Clamp
Difference between Regulated VCC
& VCC Turn−on Threshold Voltage
400 kHz Oscillator
Operating Frequency
Max Duty Cycle Clamp
Slope Compensation
Connect an NFET as follows: BIAS = G, VCC = S, VIN = D.
36 V ≤ VIN ≤ 60 V, 200 nF ≤ CSS ≤ 500 nF,
R = 500 k
7.275
Measure Voltage on BIAS with:
1.6
10 V ≤ VCC ≤ 20 V & 50 mA ≤ IBIAS ≤ 1.0 mA
With BIAS pin sinking 1.0 mA
12
(VCC Clamp Voltage) − (VCC Turn−on Threshold)
100
−
360
−
80.0
−
15
7.9
8.625
2.8
4.0
15
20
−
−
400
440
82.5
85.0
21
26
2. Not tested in production. Specification is guaranteed by design.
Unit
mA
mA
mA
V
V
mV
V
V
mV
V
V
mV
mV
mA
V
V
V
V
mV
kHz
%
mV/m
σ
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