2SB1426 Просмотр технического описания (PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

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Компоненты Описание

производитель

2SB1426

Silicon PNP transistor in a TO-92 Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

2SB1426

Rev.E Mar.-2016

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

符号

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

DATA SHEET

数值

Rating

-20

-20

-6.0

-3.0

750

150

-55～150

单位

Unit

V

V

V

A

mW

℃

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

Collector to Base Breakdown

Voltage

Collector to Emitter Breakdown

Voltage

Emitter to Base Breakdown

Voltage

Collector Cut-Off Current

Collector Cut-Off Current

DC Current Gain

Collector to Emitter Saturation

Voltage

Transition Frequency

Collector Output Capacitance

符号

Symbol

VCBO

VCEO

VEBO

ICBO

ICEO

hFE

VCE(sat)

fT

Cob

测试条件

Test Conditions

IC=-50μA IE=0

最小值 典型值 最大值

Min Typ Max

-20

单位

Unit

V

IC=-1.0mA IB=0

-20

V

IE=-10μA IC=0

-6.0

VCB=-20V IE=0

-0.1

VEB=-5.0V IC=0

-0.1

VCE=-2.0V IC=-100mA 82

390

IC=-2.0A

VCE=-2.0V

f=100MHz

VCB=-10V

f=1.0MHz

IB=-0.1A

IC=-500mA

IE=0

-0.5

240

35

V

μA

μA

V

MHz

pF

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