B772 Просмотр технического описания (PDF) - New Jersey Semiconductor

Номер в каталоге

Компоненты Описание

производитель

B772

Silicon PNP Power Transistor

New Jersey Semiconductor 

JEIIEU <^>£.mi-L.onau.<2koi iJ^ioaucti, Una.

L/

»J

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

Silicon PNP Power Transistor

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

2SB772

DESCRIPTION

• High Collector Current -lc= -3A

• High Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -SOV(Min)

• Good Linearity of (VE

• Low Saturation Voltage

• Complement to Type 2SD882

APPLICATIONS

• Designed for use in the output stage of 3 watts audio amp-

lifier, voltage regulator, DC-DC converter and relay driver.

ABSOLUTE MAXIMUM RATINGS(Ta=25'C)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-40

V

VCEO

Collector-Emitter Voltage

-30

V

VEBO Emitter-Base Voltage

-5

V

Ic

Collector Current-Continuous

-3

A

ICP

Collector Current-Pulse

Collector Power Dissipation

@ TC=25'C

PC

Collector Power Dissipation

@ Ta=25r

Tj

Junction Temperature

-7

A

10

W

1

150

•c

Tstg

Storage Temperature Range

-55-150

'C

•

1 22

^1

FIH:1 B>itter

2 Collector

3 Base

TO- 126 package

f--B-H k-F

IA

r

o

T

T

\-

r -v

~*1 CK-

t

A

1•

K ~~* r~J

D-*

*-R

G r -*t

•—

« D " 4- »•

12 3

mm

DIM MIN MAX

A 10.70 10.95

B 7.70 7.90

C 2.60 2,90

D 0.66 0.36

F 3.10 3.30

G 4.48 4.63

H 2.00 2.20

J 1.35 1.55

K 15.30 16.30

0 3,70 3,90

R 0.40 0.60

V 1.17 1.37

N.I Semi-Conductors reserves the right to change test eonditions, parameter limits and package dimensions without

nonee. Information furnished by NJ Semi-Conduetors is believed to he both aeeurnte and reliable at the time ofaoint-

lo press. I hmever. N.I Semi-Conductors assumes no responsibilit\r any errors or omissions discovered in its use.'

NJ Sciiii-t'onductors eneoiini»es customers to \erify that datasheets are current before placing orders.

Quality Semi-Conductors

Share Link: