2N5603 Просмотр технического описания (PDF) - New Jersey Semiconductor
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2N5603 Datasheet PDF : 2 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, (inc.
Silicon PNP Power Transistors
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2N5603
DESCRIPTION
• DC Current Gain-
: hFE= 30-90@lc= -1
• Wide Area of Safe Operation
• Collector-Emitter Sustaining Voltage-
: VCEO(susr-100V(Mm)
• Complement to Type 2N5604
APPLICATIONS
• Designed for use in high frequency power amplifiers, audio
power amplifier and drivers.
r^
•-<
2
PIN 1.BASE
2. EMITTER
3. COLLECT OR (CASE)
TO-66 package
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-2
A
PC
Collector Power Dissipation@Tc=25°C
20
W
Tj
Junction Temperature
150
•c
Tstg
Storage Temperature
-65-150 'C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance.Junction to Case
MAX UNIT
4.37
"C/W
j_
r-"-1 1^I
L Jc
17 I ;
_*4U-D JPU
V-,
•3-—^ 3(~*•"sLx*. /
$
^ t V\Mi^ijf
HUH
ffi
t,
i8
C
i
'
MIH MAX
A 31.40 31^0
B 17.30 17,70
c 6,70 7.10
D 0.70 0.90
E 1.40 1.60
G
5.03
H
2.54
K 9,30 10.20
L 14,70 14.90
K 12.40 12.60
0 3.60 3.80
g 24.30 24JO
V 3,50 3.70
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliableat the time of going
to press. However, NJ Semi-Conductors assumes no responsibilityfor any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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