BUV23 Просмотр технического описания (PDF) - SavantIC Semiconductor

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BUV23

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

BUV23

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; IB=0;L=25mH

V(BR)EBO Emitter-base breakdown voltage

IE=50mA; IC=0

VCEsat-1 Collector-emitter saturation voltage IC=8 A;IB=1.6A

VCEsat-2 Collector-emitter saturation voltage IC=16 A;IB=3.2 A

VBEsat

Base-emitter saturation voltage

ICEX

Collector cut-off current

ICEO

Collector cut-off current

IC=16 A;IB=3.2 A

VCE=400V;VBE=-1.5V

TC=125

VCE=260V;IB=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE-1

DC current gain

IC=8A ; VCE=4V

hFE-2

DC current gain

IC=16A ; VCE=4V

fT

Transition frequency

IC=2A ; VCE=15V; f=4MHz

Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

IC=16A ;IB1=-IB2=3.2A

VCC=100V ;RC=6.25D

MIN TYP. MAX UNIT

325

V

7

V

0.8

V

1.0

V

1.5

V

3.0

12

mA

3

mA

1.0

mA

15

60

8

8.0

MHz

0.8

µs

2.5

µs

0.4

µs

2

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