MMDT3906 Просмотр технического описания (PDF) - PANJIT INTERNATIONAL
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MMDT3906 Datasheet PDF : 4 Pages
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MMDT3906
ELECTRICAL CHARACTERISTICS (Each Transistor) TJ = 25°C Unless otherwise noted
Parameter
Symbol
Conditions
Min Typ Max Units
Collector-Emitter Breakdown Voltage V(BR)CEO IC = -1.0mA
-40
-
-
V
Collector-Base Breakdown Voltage V(BR)CBO I C= -10uA
-40
-
-
V
Emitter-Base Breakdown Voltage V(BR)EBO I E = -10uA
-5.0
-
-
V
Collector Cutoff Current
ICEX VCE= -30V, V EB= -3.0V
-
-
-50 nA
Base Cutoff Current
IBL
VCE= -30V, V EB= -3.0V
-
-
-50 nA
I C= -0.1mA, VCE= -1.0V
60
-
-
I C= -1.0mA, VCE= -1.0V
80
-
-
DC Current Gain
h FE I C= -10mA, VCE= -1.0V
100
-
300
-
I C= -50mA, VCE= -1.0V
60
-
-
I C= -100mA, VCE= -1.0V
30
-
-
Collector-Emitter Saturation Voltage VCE(SAT) I C= -10mA, I B = -1.0mA
-
I C= -50mA, I B = -5.0mA
-
- -0.25 V
- -0.40 V
Base-Emitter Saturation Voltage
VBE(SAT) I C= -10mA, I B = -1.0mA -0.65
-
-0.85
V
I C= -50mA, I B = -5.0mA
-
- -0.95
Gain-Bandwidth Product
fT
V CE= -20V, I C= -10mA
f = 100MHz
250
-
- MHz
Collector-Base Capacitance
Emitter-Base Capacitance
Delay Time
Rise Time
CCBO VCB= -5.0V, f =1.0MHz
-
CEBO VEB= -0.5V, f =1.0MHz
-
t d VCC= -3.0V, I C= -10mA
-
t r VBE(off) = 0.5V, I B1= -1.0mA -
-
4.5 pF
-
10 pF
-
35 ns
-
35 ns
Storage Time
Fall Time
t s VCC= -3.0V, I C= -10mA
t f I B1= I B2= -1.0mA
-
- 225 ns
-
-
75 ns
Note 2. Short duration test pulse used to minimize self-heating
SWITCHING TIME EQUIVALENT TEST CIRCUITS
3V
3V
0.5V
0
< 1ns
10KΩ
275Ω
CS* < 4pF
0
< 1ns
+9.1V
10KΩ
275Ω
CS* < 4pF
300ns
-10.9V
1N916
Duty Cycle ~ 2.0%
Delay and Rise Time Equivalent Test Circuit
10 to 500us
-10.9V
1N916
Duty Cycle ~ 2.0%
Storage and Fall Time Equivalent Test Circuit
9/20/2005
Page 2
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