2N6513 Просмотр технического описания (PDF) - Inchange Semiconductor

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2N6513

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2N6513

DESCRIPTION

·Low Collector Saturation Voltage-

: VCE(sat)= 1.5V(Max.)@IC= 4A

·Colletor-Emitter Sustaining Voltage-

: VCEO(SUS)= 350V(Min.)

·Fast Switching Speed

APPLICATIONS

·Designed for use in off-line power supplies, high voltage

inverters, switching regulators, ignition systems and

deflection circuits.

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

VCEO

VCER

VCBO

Collector-Emitter Voltage

Collector-Emitter Voltage

RBE= 50Ω

Collector-Base Voltage

VEBO

Emitter-Base Voltage

IC

Collector Current-Continuous

ICM

Collector Current-Peak

IB

Base Current-Continuous

PC

Collector Power Dissipation

@TC=25℃

Tj

Junction Temperature

Tstg

Storage Temperature Range

VALUE UNIT

350

V

400

V

400

V

6

V

7

A

10

A

3

A

120

W

150

℃

-65~150 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c Thermal Resistance,Junction to Case 1.46 ℃/W

isc website：www.iscsemi.com

1 isc & iscsemi is registered trademark

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