MPSH11 Просмотр технического описания (PDF) - Fairchild Semiconductor

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Компоненты Описание

производитель

MPSH11

NPN RF Transistor

Fairchild Semiconductor 

Test Circuits (continued)

NPN RF Transistor

(continued)

50 Ω

Input

0.002 µF

2.2 KΩ

1/2 W

T1

4.0-30 pF

2KΩ

1000 pF

R.F. Beads

1000 pF

390 Ω

1/2 W

1000 pF

270 Ω

1/2 W

VCC = 12 V

VAGC

FIGURE 2: 45 MHz Power Gain Circuit

50 Ω

Output

} T1 - Q3 Toroid 4:1 ratio

8 turns Pri. 2 turns Sec.

No. 22 wire

200 mHz Output into

50Ω

300 pF

T1

RFin

2.0 pF

1.1 pF

20pF

45 mHz Output

into 50Ω

3

LOin

L1

245 mHz

Input into

50Ω

1000 pF

1000 pF

47 KΩ

L1 - Ohmite RFC Z235

T1 - Primary 5 turns No. 34 wire 1/4 inch

diameter. Secondary runs No. 34 wire close

VBB

VCE

wound over a Q100 core (10.7 mHz). When

terminated on secondary side with 50Ω primary

VCE = 15 V

measures 1.5 K, -25 pF.

FIGURE 3: 200 MHz Conversion Gain Test Circuit

MPSH11/MMBTH11, Rev. B

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