KSH44H11 Просмотр технического описания (PDF) - Inchange Semiconductor

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производитель

KSH44H11

Silicon NPN Power Transistor

Inchange Semiconductor 

isc Silicon NPN Power Transistor

INCHANGE Semiconductor

KSH44H11

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO * Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0

VCE(sat)

VBE(sat)

ICEO

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Collector Cutoff Current

IC=8A; IB= 400mA

IC=8A; IB= 800mA

VCE= 80V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

hFE1

DC Current Gain

hFE2

DC Current Gain

IC= 2A; VCE= 1V

IC= 4A; VCE= 1V

fT

Current-Gain—Bandwidth Product

*:Pulse test PW≤300us,duty cycle≤2%

IC= 0.5A; VCE= 10V

MIN

TYP MAX UNIT

80

V

1.0

V

1.5

V

10

uA

50

uA

60

40

50

MHz

isc website：www.iscsemi.com

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