MCR8N Просмотр технического описания (PDF) - Kersemi Electronic Co., Ltd.
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MCR8N Datasheet PDF : 5 Pages
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MCR8M, MCR8N
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance — Junction to Case
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
RθJC
RθJA
TL
Min
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
IDRM,
(VD = Rated VDRM and VRRM; Gate Open)
TJ = 25°C
IRRM
—
TJ = 125°C
—
ON CHARACTERISTICS
Peak Forward On–State Voltage* (ITM = 16 A)
Gate Trigger Current (Continuous dc)
(VD = 12 V; RL = 100 Ω)
Holding Current
(VD = 12 V, Gate Open, Initiating Current = 200 mA)
Latch Current
(VD = 12 V, IG = 15 mA)
Gate Trigger Voltage (Continuous dc)
(VD = 12 V; 100 Ω)
Gate Non–Trigger Voltage
(VD = 12 V; RL = 100 Ω)
DYNAMIC CHARACTERISTICS
TJ = 25°C
TJ = 125°C
VTM
—
IGT
2.0
IH
4.0
IL
6.0
VGT
0.5
VGD
0.2
Critical Rate of Rise of Off–State Voltage
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
Critical Rate of Rise of On–State Current
IPK = 50 A, Pw = 40 µsec, diG/dt = 1 A/µsec, Igt = 50 mA
v v *Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.
dv/dt
100
di/dt
—
Value
2.2
62.5
260
Unit
°C/W
°C
Typ
Max
Unit
mA
—
0.01
—
2.0
—
1.8
Volts
7.0
15
mA
17
30
mA
20
40
mA
0.65
1.0
Volts
—
—
Volts
250
—
V/µs
—
50
A/µs
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