BF370 Просмотр технического описания (PDF) - Philips Electronics
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BF370 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN medium frequency transistor
Product specification
BF370
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
emitter cut-off current
hFE
DC current gain
Cc
collector capacitance
Ce
emitter capacitance
Cre
feedback capacitance
fT
transition frequency
CONDITIONS
IE = 0; VCB = 20 V
IE = 0; VCB = 20 V; Tj = 125 °C
IC = 0; VEB = 2 V
IC = 10 mA; VCE = 1 V
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = ic = 0; VEB = 1 V; f = 1 MHz
IC = 0; VCB = 10 V; f = 1 MHz
VCE = 10 V; f = 100 MHz
IC = 10 mA
IC = 40 mA
VALUE
250
UNIT
K/W
MIN.
−
−
−
40
−
−
−
TYP.
−
−
−
−
2.2
−
1.6
MAX.
400
30
100
−
−
4.5
−
UNIT
nA
µA
nA
pF
pF
pF
500 −
−
MHz
490 −
−
MHz
1999 Apr 21
3
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