2SB1411 Просмотр технического описания (PDF) - Inchange Semiconductor

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2SB1411

Silicon PNP Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Darlington Power Transistor

isc Product Specification

2SB1411

ELECTRICAL CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -1A; IB=B -2mA

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -2A; IB=B -8mA

VBE(sat) Base-Emitter Saturation Voltage

IC= -1A; IB=B -2mA

ICBO

Collector Cutoff Current

VCB= -100V; IE= 0

IEBO

Emitter Cutoff Current

VEB= -6V; IC= 0

hFE-1

DC Current Gain

IC= -1A; VCE= -3V

hFE-2

DC Current Gain

IC= -2A; VCE= -3V

Switching Times

ton

Turn-on Time

tstg

Storage Time

tf

Fall Time

IC= -1A, IB1= -IB2= -2mA,

VCC≈ -30V; RL= 30Ω

MIN TYP. MAX UNIT

-100

V

-1.5

V

-2.5

V

-2.2

V

-100 μA

-2.5 mA

1500

15000

1000

1.0

μs

3.0

μs

2.0

μs

isc Website：www.iscsemi.cn

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