BUZ45 Просмотр технического описания (PDF) - New Jersey Semiconductor

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BUZ45

N-Channel Enhancement-Mode Power Field-Effect Transistors

New Jersey Semiconductor 

RATINGS

Limiting values in accordance with the Absolute Maximum System

SYMBOL PARAMETER

CONDITIONS

VDS

VDGR

*VGS

ID

ID

IDM

Ptot

Tstg

TJ

Drain-source voltage

Drain-gate voltage

Gate-source voltage

Drain current (d.c.)

Drain current (d.c.)

Drain current (pulse peak value)

Total power dissipation

Storage temperature

Junction temperature

-

R-GS = 20k«

Tmb= 25 °C

Tmb=100°C

Tmb= 25 °C

Tmb= 25°C

-

-

THERMAL RESISTANCES

From junction to mounting base

From junction to ambient

Rthj-mb • 1,0 K/W

Rthj-a = 35 K/W

MIN.

—

—-

-

-

-

-

-55

-

MAX.

500

500

20

9,6

6,1

38

125

150

150

UNIT

V

V.

V

A

A

A

W

"C

°C

STATIC CHARACTERISTICS

Tmb = 25 °C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN.

V(BR)DSS Drain-source breakdown voltage

VGS(TO) Gate threshold voltage

IDSS

Zero gate voltage drain current

IDSS

Zero gate voltage drain current

IGSS

Gate source leakage current

RDS(ON) Drain-source on-state resistance

VGS = 0 V; ID = 0,25 mA

500

VDS = VGS; ID = i m*

2,1

VDS = 500 V; VGS = 0 V; TJ = 25 °C

VDs = 500V;VGs = OV;Tj= 125°C

VGs = ±20V;VDs = OV

VGs=10V;ID=5A

TYP. MAX.

3,0 4,0

20 250

0,1 1,0

10 100

0,55 0,6

UNIT

V

V

MA

mA

nA

n

DYNAMIC CHARACTERISTICS

Tmb = 25 °C unless otherwise specified

SYMBOL PARAMETER

8fs

Forward transconductance

QM

Input capacitance

Coss

Output capacitance

C,s,

Feedback capacitance

•don

*r

tdoff

tf

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

Ld

Internal drain inductance

LS

Internal source inductance

CONDITIONS

MIN.

VDs»25V;ID = 5A

2,7

VGS = 0 V; VDS = 25 V; f = 1 MHz

-

VDD = 30V; ID = 2,8 A;

VGS = 10 V; RGS= son;

-

Rgen = son

Measured from contact screw on

header closer to source pin and

centre of die

Measured from source lead 6 mm -

from package to source bond pad

TYP.

5,0

3800

250

100

50

80

330

110

5,0

MAX.

-

4900

400

170

75

120

430

140

UNIT

S

pF

PF

pF

ns

ns

ns

ns

nH

12,5 -

nH

REVERSE DIODE RATINGS AND CHARACTERISTICS

Tmb = 25 "C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN.

IDR

IDRM

VSD

Continuous reverse drain current Tmb=25°C

Pulsed reverse drain current

Tmb=2S°C

Diode forward on-voltage

IF =19,2 A; VGS= OV; -

Tj = 25°C

trr

Reverse recovery time

Qrr

Reverse recovery charge

lF = 9,6A;Tj = 25°C

-dlp/dt = 100 A/MS;

Tj = 25°C;VGS = OV;

VR = 100 V

TYP.

1,3

1200

MAX.

9,6

38

1,7

UNIT

A

A

V

ns

12

MC

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