BF414 Просмотр технического описания (PDF) - Siemens AG

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производитель

BF414

NPN Silicon RF Transistor

Siemens AG 

BF 414

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

DC Characteristics

Collector-emitter breakdown voltage

IC = 2 mA, IB = 0

Collector-base breakdown voltage

IC = 10 µA, IE = 0

Emitter-base breakdown voltage

IE = 10 µA

Collector cutoff current

VCB = 20 V

DC current gain

IC = 4 mA, VCE = 10 V

AC Characteristics

Transition frequency

IC = 1 mA, VCE = 10 V, f = 100 MHz

IC = 5 mA, VCE = 10 V, f = 100 MHz

Collector-emitter capacitance

VCE = 10 V, VBE = 0 V, f = 1 MHz

Noise figure

IC = 5 mA, VCE = 10 V, f = 100 MHz

RS = 60 Ω

Symbol

Values

Unit

min. typ. max.

V(BR) CE0 30

–

–

V

V(BR) CB0 40

–

–

V(BR) EB0 4

–

–

ICB0

–

–

60

nA

hFE

30

80

–

–

fT

MHz

–

400 –

–

560 –

Cce

–

0.1 –

pF

F

–

3

–

dB

Semiconductor Group

2

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