2SA1797 Просмотр технического описания (PDF) - Galaxy Semi-Conductor

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производитель

2SA1797

PNP Silicon Epitaxial Planar Transistor

Galaxy Semi-Conductor 

Production specification

PNP Silicon Epitaxial Planar Transistor

FEATURES

 Low saturation voltage VCE(sat)=-0.35V(Max.)

(IC/IB=-1A/-0.5A).

 Excellent DC current gain characteristics.

 Complements the 2SA1797 and 2SC4672.

 MSL 3

APPLICATIONS

 Low frequency transistor.

Pb

Lead-free

ORDERING INFORMATION

Type No.

Marking

2SA1797

AGP/AGQ

2SA1797

SOT-89

Package Code

SOT-89

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

VCBO

Collector-Base Voltage

-50

VCEO

Collector-Emitter Voltage

-50

VEBO

IC

PC

Emitter-Base Voltage

Collector Current

Collector Dissipation

-6

DC -2

Pulse -5

500

Tj,Tstg

Junction and Storage Temperature

-55 to +150

Units

V

V

V

A

mW

℃

E027

Rev.A

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