BD245 Просмотр технического описания (PDF) - SavantIC Semiconductor
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BD245 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BD245/A/B/C
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD245
VCEO(BR)
Collector-emitter
breakdown voltage
BD245A
BD245B
IC=30mA ;IB=0
BD245C
VCEsat-1 Collector-emitter saturation voltage
IC=3A ;IB=0.3A
VCEsat-2 Collector-emitter saturation voltage
IC=10A ;IB=2.5A
VBE-1
Base-emitter on voltage
IC=3A ; VCE=4V
VBE-2
Base-emitter on voltage
IC=10A ; VCE=4V
ICEO
Collector
cut-off current
BD245/245A
VCE=30V; IB=0
BD245B/245C VCE=60V; IB=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=4V
hFE-2
DC current gain
IC=3A ; VCE=4V
hFE-3
DC current gain
IC=10A ; VCE=4V
Switching times
ton
Turn-on time
toff
Turn-off time
IC=1A;
IB1=-IB2=0.1A
RL=20@
MIN TYP. MAX UNIT
45
60
V
80
100
1.0
V
4.0
V
1.6
V
3.0
V
0.7
mA
1.0
mA
40
20
4
0.3
µs
1.0
µs
2
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