2N4919 Просмотр технического описания (PDF) - Inchange Semiconductor
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производитель
2N4919 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2N4918 2N4919 2N4920
DESCRIPTION
·With TO-126 package
·Complement to type 2N4921/4922/4923
·Excellent safe operating area
·Low collector saturation voltage
APPLICATIONS
·For driver circuits ,switching ,and
amplifier applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
2N4918
VCBO
Collector-base voltage 2N4919
2N4920
2N4918
VCEO
Collector-emitter voltage 2N4919
2N4920
VEBO
Emitter-base voltage
IC
Collector current
ICM
Collector current-Peak
IB
Base current
PD
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
·
VALUE
-40
-60
-80
-40
-60
-80
-5
-1
-3
-1
30
150
-65~150
UNIT
V
V
V
A
A
A
W
℃
℃
VALUE
4.16
UNIT
℃/W
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