STD3NM60 Просмотр технического описания (PDF) - STMicroelectronics

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производитель

STD3NM60

N-channel 600 V, 1.3 Ω, 3 A TO-220, DPAK, IPAK Zener-protected MDmesh™ Power MOSFET

STMicroelectronics 

STD3NM60, STD3NM60-1, STP4NM60

3

Test circuits

Test circuits

Figure 15. Switching times test circuit for

resistive load

Figure 16. Gate charge test circuit

VDD

12V

47kΩ

1kΩ

100nF

RL

2200

3.3

µF

µF VDD

IG=CONST

VD

Vi=20V=VGMAX

100Ω

D.U.T.

VGS

RG

t(s) PW

D.U.T.

2200

µF

2.7kΩ

VG

47kΩ

uc PW

rod AM01468v1

1kΩ

AM01469v1

P Figure 17. Test circuit for inductive load

Figure 18. Unclamped inductive load test

te switching and diode recovery times

circuit

Obsole G

t(s) - 25Ω

A

D

D.U.T.

S

B

AA

FAST

DIODE

L=100µH

B

3.3

B

µF

D

G

uc RG

S

1000

µF

VDD

Vi

L

VD

2200

3.3

µF

µF

VDD

ID

D.U.T.

rod Pw

P AM01470v1

lete Figure 19. Unclamped inductive waveform

Figure 20. Switching time waveform

AM01471v1

bso V(BR)DSS

O VD

ton

tdon

tr

toff

tdoff tf

VDD

IDM

ID

0

VDD

90%

10% VDS

90%

VGS

90%

10%

AM01472v1

0

10%

AM01473v1

Doc ID 8370 Rev 4

9/17

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